JPS6244535Y2 - - Google Patents

Info

Publication number
JPS6244535Y2
JPS6244535Y2 JP1981139526U JP13952681U JPS6244535Y2 JP S6244535 Y2 JPS6244535 Y2 JP S6244535Y2 JP 1981139526 U JP1981139526 U JP 1981139526U JP 13952681 U JP13952681 U JP 13952681U JP S6244535 Y2 JPS6244535 Y2 JP S6244535Y2
Authority
JP
Japan
Prior art keywords
region
conductivity type
epitaxial layer
collector
shield electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1981139526U
Other languages
English (en)
Japanese (ja)
Other versions
JPS58124953U (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13952681U priority Critical patent/JPS58124953U/ja
Publication of JPS58124953U publication Critical patent/JPS58124953U/ja
Application granted granted Critical
Publication of JPS6244535Y2 publication Critical patent/JPS6244535Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP13952681U 1981-09-18 1981-09-18 半導体集積回路装置 Granted JPS58124953U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13952681U JPS58124953U (ja) 1981-09-18 1981-09-18 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13952681U JPS58124953U (ja) 1981-09-18 1981-09-18 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS58124953U JPS58124953U (ja) 1983-08-25
JPS6244535Y2 true JPS6244535Y2 (en]) 1987-11-25

Family

ID=30101589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13952681U Granted JPS58124953U (ja) 1981-09-18 1981-09-18 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS58124953U (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0746717B2 (ja) * 1985-05-17 1995-05-17 日本電気株式会社 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5036105B2 (en]) * 1971-10-01 1975-11-21
JPS5412793A (en) * 1977-06-29 1979-01-30 Mitsubishi Electric Corp Concentration measuring method of solutions
JPS55140246A (en) * 1979-04-19 1980-11-01 Nec Corp Semiconductor device
JPS5617039A (en) * 1979-07-20 1981-02-18 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS58124953U (ja) 1983-08-25

Similar Documents

Publication Publication Date Title
US4831424A (en) Insulated gate semiconductor device with back-to-back diodes
KR850003068A (ko) 반도체 집적 회로 및 그 제조 방법
JPH0441500B2 (en])
JPS6244535Y2 (en])
JP2808871B2 (ja) Ｍｏｓ型半導体素子の製造方法
JPH0129795Y2 (en])
JPH06112216A (ja) 高耐圧半導体装置
JPS6155775B2 (en])
JP2629426B2 (ja) ２重拡散型ｍｉｓｆｅｔを備えた半導体装置及びその製造方法
JP3435171B2 (ja) 高耐圧半導体素子
JPH01293661A (ja) 半導体装置
JPH0440274Y2 (en])
JPH0124938Y2 (en])
GB1249812A (en) Improvements relating to semiconductor devices
JPH079385Y2 (ja) 半導体集積回路装置
JPH0516196B2 (en])
JPS61226971A (ja) 半導体装置
JP2682231B2 (ja) 半導体装置
JPH0110938Y2 (en])
JP3285131B2 (ja) 埋込ゲート形静電誘導半導体素子
JPS6020954Y2 (ja) 半導体装置
JPH0344412B2 (en])
JPS61142775A (ja) Ｍｏｓトランジスタ
JPS6019667B2 (ja) 集積回路半導体装置
JPH0834244B2 (ja) 半導体集積回路装置